A Comparative Study of CMOS Transimpedance Amplifier (TIA)
نویسندگان
چکیده
In this paper a comparative study of different CMOS transimpedance amplifier has been presented. Standard device parameters such as gain, input refereed noise, power dissipation and group delay are studied compared. Here the is divided on basis its topology technology used performance summarized to get overview. Most analysis taken performed 0.18 μm some implemented using 45nm, 0.13μm, 65nm, 90nm.
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ژورنال
عنوان ژورنال: Indian Journal of VLSI Design
سال: 2023
ISSN: ['2582-8843']
DOI: https://doi.org/10.54105/ijvlsid.a1215.033123